ALLOS Semiconductors: ALLOS' customers confirm dynamic on-resistance of carbon-doping-free GaN-on-Si

In an invited talk at the 2018 European Materials Research Society (E-MRS) Fall Meeting at Warsaw University of Technology, Poland, Dr Atsushi Nishikawa, the co-founder & chief technology officer of IP licensing & technology engineering firm ALLOS Semiconductors GmbH of Dresden, Germany, showed data from customers that confirms not only outstanding wafer-level data but also what is claimed to be excellent dynamic on-resistance (Ron) and high-temperature performance for its gallium nitride on silicon (GaN-on-Si) epitaxial material. Most importantly, carbon-doping (known for causing bad dynamic on-resistance) is uniquely avoided...