EpiGaN: EpiGaN showcasing RF power and power switching GaN epi techhnology at IMS and PCIM Europe

EpiGaN nv of Hasselt, near Antwerp, Belgium - which supplies gallium nitride on silicon (GaN-on-Si) and gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers for power switching, RF and sensor applications - is highlighting the latest enhancements of its GaN epiwafer solutions for RF power and power switching at the IEEE International Microwave Symposium (IMS 2018) in Philadelphia, MA, USA (10-15 June) and at PCIM Europe 2018 (Power Conversion and Intelligent Motion) in Nuremberg, Germany (5-7 June). At PCIM Europe, EpiGaN will exhibit in booth 432 (hall 6)...