EpiGaN: Transphorm awarded $15.9m extension to $2.6m base ONR contract to establish US source of GaN epi

Transphorm Inc of Goleta, near Santa Barbara, CA, USA - which designs and manufactures JEDEC- and AEC-Q101-qualified high-voltage (HV) gallium nitride (GaN) field-effect transistors (FETs) for high-voltage (HV) power conversion applications - says that the US Department of Defense (DoD) Office of Naval Research (ONR) has exercised a three-year $15.9m option on an existing $2.6m base contract with the company...