Ferroelectric Memory: Ferroelectric Memory Assigned Two Patents

Threshold switch structure and memory cell arrangement Ferroelectric Memory GmbH, Dresden, Germany, has been assigned a patent (11605435) developed by Schenk, Tony, Dresden, Germany, for "threshold switch structure and memory cell arrangement." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Various aspects relate to a threshold switch structure and [...] The post Ferroelectric Memory Assigned Two Patents appeared first on StorageNewsletter.