GeneSiC: GeneSiC launches third-generation 1200V SiC MOSFETs

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced the availability of its third-generation 1200V G3R SiC MOSFETs, with on-resistance (RDS(ON)) levels ranging from 20mΩ to 350mΩ. Featuring what are claimed to be industry-leading performance, robustness and quality, system benefits are said to include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size for automotive and industrial applications...