EPC: EPC launches EPC2367 100V GaN FET with 1.2m on-resistance

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications - has introduced the EPC2367, a next-generation 100V eGaN FET that delivers high performance and efficiency as well as lower system costs for power conversion applications...